Supplied in a high power dissipation, low thermal resistance, fully hermetic, ceramic SMD1 package the 25A, 650V rated SML25SCM650N2B also ensures faster switching and low switching losses in comparison to normal Si type MOSFETs, consequently the size of the passive components in the circuit can be reduced resulting in weight and space saving benefits. The N-channel MOSFET features a total power dissipation of 90W at a TJ temperature of 25 degrees. A range of screening options are available.
For use in applications that require faster switching in high temperature power conversion topologies and systems, the SML25SCM650N2B will find favour with design engineers working in industrial power conversion applications including oil drilling, distributed management control systems, renewable energy applications / power conversion, space systems and applications.
Silicon Carbide is the new semiconductor technology of choice to help power electronic design engineers design with more efficiency, with higher operating temperatures to lay the foundation for future conversion and control system design demands. With the SML25SCM650N2B, the combination of new Silicon Carbide technology with a high reliability, industry standard outline hermetic packaging technology coupled with TT Electronics’ renowned Lutterworth based design and manufacturing capability delivers value and very high performance to the end customer.
TT Electronics, a global provider of engineered technologies for performance-critical applications, will exhibit advanced power conversion, control, and complex electronics solutions at DSEI from 9-12 September 2025 in Hall N4, booth #315.
TT Electronics has secured a significant, multi-million-pound, multi-year subcontract award with Ultra PCS Ltd for the continuation of supply of the next lots of cable harness assemblies for combat aircraft.
We are pleased to confirm that our state-of-the-art electronics manufacturing services (EMS) facility in Mexicali, Mexico, has achieved certification to ISO 13485:2016.