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Our  devices are used in applications where performance, consistency and reliability are imperative. These include television and radio transmitters, space vehicles, aircraft equipment and banking systems.

All aspects of design, processing, testing, packaging and qualification are managed within our facilities, ensuring complete control over quality and reliability – and are complemented by quality approvals for processes and products from major standards organisations, including ISO and the DLA.

 A comprehensive range of package styles including conventional flange mount, BeO free flange-mount, surface mount and plastic enables TT Electronics devices to be used with any board technology.

All parts are fully RoHS compliant.

TT Electronics RF MOSFETs are manufactured using a unique silicon Vertical DMOS process with gold metalisation which gives high performance and maximum reliability at high power levels. 

By adopting this process, TT Electronics is able to deliver the following advantages to our broad range of end customers: 

  • Ultra-wide band - 1MHz to 1GHz
  • Wide power range - 750mW to 400W
  • Exceptionally low feedback capacitance 
  • High gain via reduced Miller Effect (20dB VHF, 16dB UHF)
  • Easier design
  • Low Rds(on) for high efficiency (>50%)
  • High breakdown voltage (typically 85V for 28V parts) for exceptional ruggedness (up to 20:1 VSWR withstand)
  • Excellent thermal stability

Packaging and Screening Options

We can provide alternative packaging and customised electrical selection and screening to meet customers’ detailed specifications. Our specialist team has experience in all aspects of RF technology - including not only silicon but also package technology and RF design. As a result we are able to liaise with our customers ‘engineer-to-engineer’ and supply devices that meet the needs of the application precisely.

Continuity of Supply

TT Electronics has a policy of continuing supply on the die technology used in all products and has never discontinued an RF MOSFET die. We are committed to supporting all our RF products indefinitely, and will build any product required by our customers provided only that supplies of the chosen package are available.

BeO Free Packaging Technology

The DMD range of RF Power MOSFETs eliminates the BeO portion of the package and replaces it with either a Diamond or Aluminium Nitride substrate. The Diamond option halves the thermal resistance compared to the BeO version. Both the Diamond and Aluminium Nitride options give up to 3dB more gain compared to the BeO version, due to lower source inductance. Same silicon VDMOS die are used to retain exceptional ruggedness.

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