OP509B

Phototransistor

Lifecycle:

Active

Brand:

Optek Technology

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Lensed for high sensitivity (OP509)

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Easily stackable on 0.100" (2.54 mm) hole centers

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Inexpensive plastic package

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Mechanically and spectrally matched to OP168F and OP268F series of infrared emitting diodes

Specifications

Applications
  • Applications requiring a wide acceptance angle
  • Applications requiring high sensitivity
  • Space-limited applications
Packaging Endlooker Lensed
Lead Spacing .100"
Component Type Phototransistor
High Reliability False
Screening Level -
Hall Effect No
Photologic No
Photo Detector Type Phototransistor
Number of Elements 1
Material Silicon
Color -
Lead Length Min 0.5"
Lead Length Max -
Receiver Type -
Responsivity Min/Max/Typ -
RoHs Compliance Y
Wavelength 890nm
Beam Angle -
Viewing Angle 50°
Output Power (mW/cm2) Min/Max -
Operating Temperature -40°C ~ 100°C
Data Rate Max -
Rise Time Typ -
Reverse Voltage -
Peak Response Wavelength -
Spectral Response Wavelength -
Output Type NPN Silicon Phototransistor
VCE Max 30V
VCC Range -
IF Typ/Max -
Forward-Current Transfer Ratio Min -
Forward-Current Transfer Ratio Max -
Light Current IC(ON) Min 1.4mA
Light Current IC(ON) Max 10.6mA
ICCL/ICCH -

Resources & Technical Documents

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  • End Of Life (0)
  • Product Change Notification (0)
  • Case Study (0)
  • Technical Bulletin (0)
  • Policy & Regulations (0)
  • Terms & Conditions (0)
  • White Paper (0)
  • Datasheet (1)
  • Brochure (4)
  • 3D Model (1)
  • Application Note (1)
  • Compliance (8)